AP2530AGY-HF Advanced Power Electronics Corp., AP2530AGY-HF Datasheet

AP2530AGY-HF

Manufacturer Part Number
AP2530AGY-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2530AGY-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
72
Rds(on) / Max(m?) Vgs@4.5v
135
Qg (nc)
2.8
Qgs (nc)
1.2
Qgd (nc)
1.4
Id(a)
3.3
Pd(w)
1.136
Configuration
Complementary N-P
Package
SOT-26

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2530AGY-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low Gate Charge
▼ Fast Switching Performance
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface mount
applications.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
SOT-26
3
3
D1
S1
D2
G1
S2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
30
+20
3.3
2.7
12
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
1.136
R
I
R
I
D
D
P-channel
AP2530AGY-HF
DS(ON)
DS(ON)
DSS
DSS
Value
-2.3
-1.8
+20
110
-30
-10
S1
D1
G2
150mΩ
72mΩ
201101171
-2.3A
-30V
3.3A
Units
℃/W
30V
Unit
W
V
V
A
A
A
D2
S2
1

Related parts for AP2530AGY-HF

AP2530AGY-HF Summary of contents

Page 1

... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-26 G1 N-channel Parameter 3 AP2530AGY-HF Halogen-Free Product N-CH BV 30V DSS R 72mΩ DS(ON) I 3.3A D P-CH BV -30V DSS R 150mΩ DS(ON) I -2. ...

Page 2

... AP2530AGY-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... DS V =+20V =- =-15V DS V =-4. =-15V =3.3Ω =-10V =-15V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =0.9A =2A dI/dt=100A/µs AP2530AGY-HF Min. Typ. - =-250uA -1 - =-2A - 2 2.5 - 0.8 - 1 160 - Min ...

Page 4

... AP2530AGY-HF N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 110 =25 A 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0.8 V ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 0.1 100us 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f Fig 12. Gate Charge Waveform AP2530AGY-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.01 T Single Pulse Duty factor = t/T ...

Page 6

... AP2530AGY-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 220 200 180 160 140 120 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage 3 =150 C j 2.0 1.0 0.0 0.2 0.4 0.6 0.8 -V ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 0.1 100us 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f Fig 12. Gate Charge Waveform AP2530AGY-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0. 0.2 T Single Pulse Duty factor = t/T ...

Related keywords