AP2603GY-HF Advanced Power Electronics Corp., AP2603GY-HF Datasheet

AP2603GY-HF

Manufacturer Part Number
AP2603GY-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2603GY-HF

Vds
-20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@10v
53
Rds(on) / Max(m?) Vgs@4.5v
65
Rds(on) / Max(m?) Vgs@2.5v
120
Qg (nc)
10.6
Qgs (nc)
2.32
Qgd (nc)
3.68
Id(a)
-5
Pd(w)
2
Configuration
Single P
Package
SOT-26

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2603GY-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
SOT-26
GS
GS
D
@ 4.5V
@ 4.5V
D
S
3
3
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
+12
-20
-20
DS(ON)
-5
-4
G
2
DSS
AP2603GY-HF
Value
62.5
D
S
65mΩ
201103314
-5.0A
-20V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A
1

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AP2603GY-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-26 D Parameter Parameter 3 AP2603GY-HF Halogen-Free Product BV -20V DSS R 65mΩ DS(ON) I -5. Rating Units - ...

Page 2

... AP2603GY-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 -4.2A =-4.2A D =-4. -4.5V = 1.6 o =25 C 1.4 1.2 1 0.8 0 -50 Fig 4. Normalized On-Resistance 1.5 1 0.5 0 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP2603GY-HF -5. -4.0V 65mΩ -3. -2. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 2.01E+ 100 o T ...

Page 4

... AP2603GY- -4. -16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this 10 area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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