AP2323GN-HF Advanced Power Electronics Corp., AP2323GN-HF Datasheet

AP2323GN-HF

Manufacturer Part Number
AP2323GN-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2323GN-HF

Vds
-20V
Vgs
±8V
Rds(on) / Max(m?) Vgs@4.5v
38
Rds(on) / Max(m?) Vgs@2.5v
50
Rds(on) / Max(m?) Vgs@1.8v
64
Qg (nc)
14.5
Qgs (nc)
2
Qgd (nc)
4
Id(a)
-5
Pd(w)
1.38
Configuration
Single P
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2323GN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Capable of 1.8V Gate Drive
▼ Small Package Outline
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-amb
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
, V
, V
GS
GS
@ 4.5V
@ 4.5V
SOT-23
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
3
Halogen-Free Product
S
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
1.38
-20
-20
+8
DS(ON)
-5
-4
DSS
AP2323GN-HF
Value
90
D
S
201110141
38mΩ
-20V
Units
℃/W
-5A
Unit
W
V
V
A
A
A
1

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AP2323GN-HF Summary of contents

Page 1

... J Thermal Data Symbol Rthj-amb Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D SOT-23 G Parameter 4. 4. Parameter 3 AP2323GN-HF Halogen-Free Product BV -20V DSS R 38mΩ DS(ON Rating Units - ...

Page 2

... AP2323GN-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 - -4.5V GS 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance -250uA D 1.6 1 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP2323GN-HF o -5. 150 C A -4.5V -3.5V -2. -1.8V 65mΩ Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 2.01E+ ...

Page 4

... AP2323GN- - -10V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area -5V DS ...

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