AP2622GY Advanced Power Electronics Corp., AP2622GY Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2622GY

Manufacturer Part Number
AP2622GY
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2622GY

Vds
50V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
1800
Rds(on) / Max(m?) Vgs@4.5v
3200
Qg (nc)
1
Qgs (nc)
0.5
Qgd (nc)
0.5
Id(a)
5.2
Pd(w)
0.8
Configuration
Dual N
Package
SOT-26
▼ Low Gate Charge
▼ Small Package Outline
▼ Surface Mount Package
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
G1
Parameter
Parameter
1,2
3
3
, V
, V
GS
GS
D1
S1
@ 10V
@ 10V
G2
3
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
S2
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
0.006
D
±20
520
410
1.5
0.8
SOT-26
50
DS(ON)
DSS
Value
D1
150
S1
AP2622GY
D2
G1
200624051-1/4
520mA
S2
1.8Ω
Units
W/℃
℃/W
50V
Unit
mA
mA
W
G2
V
V
A

Related parts for AP2622GY

AP2622GY Summary of contents

Page 1

... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 10V 10V GS 1,2 Parameter 3 AP2622GY Pb Free Plating Product BV D2 DSS R DS(ON) I 520mA SOT-26 G1 Rating 50 ±20 520 410 1 ...

Page 2

... AP2622GY Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 500m 1.5 1.0 0.5 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 1 0.7 0.3 -50 1.6 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2622GY o 10V C 7.0V 5. Drain-to-Source Voltage (V) DS =10V 0 50 100 Junction Temperature ( 100 Junction Temperature ( ...

Page 4

... AP2622GY 500m =30V DS V =40V 0 Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 10.00 1. Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 1.0 V = 0.6 0.4 0.2 0 Gate-to-Source Voltage (V) GS Fig 11 ...

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