AP4415GH Advanced Power Electronics Corp., AP4415GH Datasheet

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... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP4415GH/J RoHS-compliant Product BV -35V DSS R 36mΩ DS(ON) I -24A TO-252( ...

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... AP4415GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... -10V ℃ 1.4 G 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.5 1 0.5 0.0 1 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4415GH/J -10V -7. 150 C C -5.0V -4. -3 Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j 2.01E+ ...

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... AP4415GH Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...