AP4513GH-A Advanced Power Electronics Corp., AP4513GH-A Datasheet - Page 7

• Manufacturer Part Number: AP4513GH-A
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4513GH-A

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 32
• Rds(on) / Max(m?) Vgs@4.5v: 54
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 7.7
• Pd(w): 3.125
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
0.01
100
0.1
10
12
10
20
15
10
1
8
6
4
2
0
5
0
0.1
0.0
0
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Single Pulse
T
V
A
V
DS
3.0
I
=25
DS
T
D
=5V
-V
V
j
=-5A
=-28V
Q
=25
2
o
GS
DS
G
C
o
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
6.0
1
C
9.0
4
T
j
=150
12.0
10
o
C
6
15.0
100ms
100us
10ms
1ms
10s
1s
18.0
100
8
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
Duty factor=0.5
0.01
G
0.02
0.001
0.05
Single Pulse
0.2
0.1
5
-V
Q
GS
DS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
G
GD
Charge
17
1
AP4513GH-A
P
DM
Duty factor = t/T
Peak T
Rthja=75℃/W
10
21
j
= P
t
DM
f=1.0MHz
T
x R
100
25
thja
Q
+ T
C
C
C
A
iss
rss
oss
1000
29
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