AP4578GM-HF Advanced Power Electronics Corp., AP4578GM-HF Datasheet - Page 7

• Manufacturer Part Number: AP4578GM-HF
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4578GM-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 64
• Rds(on) / Max(m?) Vgs@4.5v: 80
• Qg (nc): 9
• Qgs (nc): 3
• Qgd (nc): 4
• Id(a): 4.5
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
12
10
10
20
15
10
8
6
4
2
0
5
0
1
0.0
0.1
Single Pulse
0
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
T
V
A
=25
DS
V
=-5V
I
DS
o
-V
D
-V
5.0
C
T
=-3A
=-48V
DS
j
Q
GS
=25
2
1
G
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
o
C
10.0
10
4
T
15.0
j
=150
100us
100ms
o
10ms
1ms
C
DC
100
1s
6
20.0
25.0
1000
8
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
0.01
100
10
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
Duty factor=0.5
0.02
0.01
G
0.1
0.001
0.05
0.2
5
Single Pulse
-V
Q
GS
DS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
G
GD
Charge
AP4578GM-HF
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
= 135℃/W
j
= P
t
DM
f=1.0MHz
T
x R
100
25
thja
+ T
Q
C
C
C
a
iss
rss
oss
1000
29
7