AP9962AGD Advanced Power Electronics Corp., AP9962AGD Datasheet
AP9962AGD
Specifications of AP9962AGD
Related parts for AP9962AGD
AP9962AGD Summary of contents
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... Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP Parameter 10V 10V GS 1 Parameter 3 AP9962AGD RoHS-compliant Product BV 40V DSS R 25mΩ DS(ON Rating Units 40 + -55 to 150 -55 to 150 ...
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... AP9962AGD Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... =10V G 1 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.2 2 1.8 1.6 1.4 1.2 1 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9962AGD o T =150 C A 10V 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j 2.01E+ 100 ...
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... AP9962AGD = =20V DS V =24V =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 1 0.1 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : PDIP Part Marking Information & Packing : PDIP-8 9962AGD YWWSSS 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y： ...