AP9962GM Advanced Power Electronics Corp., AP9962GM Datasheet

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... Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter 10V 10V GS 1 Parameter 3 AP9962GM RoHS-compliant Product BV 40V DSS R 25mΩ DS(ON Rating Units 40 + 0.016 W/℃ -55 to 150 ...

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... AP9962GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... G T =25 C 1.6 A 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 -50 1.6 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9962GM o 10V C 8.0V 5.0V 4.0V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 o Junction Temperature ( ...

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... AP9962GM = =20V =25V =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 9962GM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code ...