AP9973GM Advanced Power Electronics Corp., AP9973GM Datasheet - Page 4

• Manufacturer Part Number: AP9973GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9973GM

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 100
• Qg (nc): 8
• Qgs (nc): 2
• Qgd (nc): 4
• Id(a): 3.9
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

AP9973GM
0.01
100
0.1
14
12
10
10
8
6
4
2
0
1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0.1
0
Fig 7. Gate Charge Characteristics
V
90%
10%
V
Single Pulse
T
DS
I
GS
D
A
V
=3.9A
=25
DS
4
Q
G
o
1
, Drain-to-Source Voltage (V)
t
C
d(on)
, Total Gate Charge (nC)
V
V
V
DS
DS
DS
t
=30V
=38V
=48V
8
r
10
12
t
d(off)
100
100ms
16
10ms
1ms
t
DC
f
1s
1000
20
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
10
0.1
Fig 8. Typical Capacitance Characteristics
1
0.0001
1
Fig 12. Gate Charge Waveform
4.5V
V
0.01
0.02
G
0.05
Duty factor=0.5
0.001
0.2
5
0.1
Single Pulse
Q
V
GS
DS
0.01
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
Q
Q
13
0.1
G
Charge
GD
17
1
P
DM
Duty factor = t/T
Peak T
Rthja=135℃/W
21
10
t
j
= P
T
DM
x R
f=1.0MHz
100
25
thja
+ T
Q
Coss
Crss
Ciss
a
1000
29
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