AP9990GP-HF Advanced Power Electronics Corp., AP9990GP-HF Datasheet - Page 4

• Manufacturer Part Number: AP9990GP-HF
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness The TO-220 package is widely preferred for commercial-industrial power applicat
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9990GP-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6
• Qg (nc): 59
• Qgs (nc): 14
• Qgd (nc): 29.5
• Id(a): 100
• Pd(w): 125
• Configuration: Single N
• Package: TO-220CFM

AP9990GP-HF
1000
100
10
12
10
1
8
6
4
2
0
0.1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Operation in this area
Fig 7. Gate Charge Characteristics
90%
limited by R
10%
V
Single Pulse
V
T
GS
I
DS
C
D
=25
DS(ON)
=40A
V
Q
DS
V
o
20
1
C
t
G
DS
d(on)
V
,Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
=30V
DS
V
=36V
DS
t
=48V
r
10
40
100ms
t
100us
10ms
d(off)
100
1ms
60
DC
t
f
1000
80
Fig 10. Effective Transient Thermal Impedance
4000
3000
2000
1000
0.01
0.1
0.00001
0
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
0.02
0.01
V
Duty factor = 0.5
0.05
Single Pulse
0.1
0.2
G
0.0001
5
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
T
x R
1
25
thjc
+ T
Q
C
C
C
C
iss
oss
rss
10
29
4