AP4511GM-HF Advanced Power Electronics Corp., AP4511GM-HF Datasheet

AP4511GM-HF

Manufacturer Part Number
AP4511GM-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4511GM-HF

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
37
Qg (nc)
11
Qgs (nc)
3
Qgd (nc)
6
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
D1
3
3
D1
SO-8
D2
D2
S1
G1
S2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
G2
N-channel
3
N-CH BV
P-CH BV
+20
G1
35
5.7
30
7
Halogen-Free Product
-55 to 150
-55 to 150
Rating
0.016
2.0
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
AP4511GM-HF
Value
62.5
D1
S1
+20
-6.1
-35
-30
-5
G2
25mΩ
40mΩ
201108022
-6.1A
-35V
Units
W/℃
℃/W
35V
Unit
7A
W
V
V
A
A
A
D2
S2
1

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AP4511GM-HF Summary of contents

Page 1

... Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 N-channel Parameter 3 AP4511GM-HF Halogen-Free Product N-CH BV 35V DSS R 25mΩ DS(ON P-CH BV -35V DSS R 40mΩ DS(ON) I -6. ...

Page 2

... AP4511GM-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... D V =-28V DS V =-4. =-18V =3.3Ω, =18Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-6A dI/dt=-100A/µs AP4511GM-HF Min. Typ. -35 - =-1mA - -0. ...

Page 4

... AP4511GM-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 10us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4511GM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

Page 6

... AP4511GM-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4511GM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

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