AP4409GEP-HF Advanced Power Electronics Corp., AP4409GEP-HF Datasheet - Page 3

• Manufacturer Part Number: AP4409GEP-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4409GEP-HF

• Vds: -35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 8.2
• Rds(on) / Max(m?) Vgs@4.5v: 12.5
• Qg (nc): 58
• Qgs (nc): 12
• Qgd (nc): 33
• Id(a): -80
• Pd(w): 83.3
• Configuration: single P
• Package: TO-220

280
240
200
160
120
80
40
12
10
30
20
10
0
8
6
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
-V
-V
Reverse Diode
-V
T
4
SD
j
GS
DS
=150
4
0.4
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T
o
C
C
8
= 25
0.6
o
6
C
0.8
I
T
12
D
C
T
= -30 A
=25
j
=25
1
℃
V
8
o
C
G
16
= - 4.0 V
1.2
-7.0 V
-5.0 V
-10V
-6.0 V
1.4
20
10
240
200
160
120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
40
1.6
1.2
0.8
0.4
0
2
0
-50
0
-50
Fig 6. Gate Threshold Voltage v.s.
I
V
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
D
D
G
= -40A
= -1mA
= -10V
Junction Temperature
v.s. Junction Temperature
-V
4
T
T
j
DS
j
0
0
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
8
T
C
AP4409GEP-HF
50
50
= 150
12
o
C
100
100
o
o
V
C)
C)
16
G
= - 4.0 V
-7.0V
-6.0V
-5.0V
-10V
150
20
150
3