AP03N70I Advanced Power Electronics Corp., AP03N70I Datasheet - Page 3

• Manufacturer Part Number: AP03N70I
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP03N70I

• Vds: 600V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 3.6
• Qg (nc): 12
• Qgs (nc): 3
• Qgd (nc): 5
• Id(a): 3.3
• Pd(w): 29
• Configuration: single N
• Package: TO-220

0.01
1.2
1.1
1.0
0.9
0.8
100
0.1
10
1
4
3
2
1
0
-50
0.1
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
T
=25
j
V
0.3
= 150
T
V
Temperature
o
Reverse Diode
DS
C
5
SD
j
, Junction Temperature (
0
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
o
C
0.5
10
0.7
50
DSS
15
0.9
T
v.s. Junction
j
o
= 25
100
C)
V
20
o
1.1
G
C
=4.0V
10V
6.0V
5.0V
4.5V
1.3
150
25
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.2
0.8
0.4
3
2
2
1
1
0
2
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
D
C
G
=1.6A
=150
=10V
v.s. Junction Temperature
Junction Temperature
T
5
V
T
o
j
C
DS
0
j
0
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
10
50
50
15
AP03N70I
100
100
o
o
C)
C)
V
20
G
=3.5V
4.0V
4.5V
5.0V
10V
150
150
25
3