AP15P15GI Advanced Power Electronics Corp., AP15P15GI Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP15P15GI

Manufacturer Part Number
AP15P15GI
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP15P15GI

Vds
-140V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
180
Qg (nc)
55
Qgs (nc)
8.2
Qgd (nc)
16.5
Id(a)
-15
Pd(w)
31.3
Configuration
Single P
Package
TO-220CFM
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
-140
31.3
S
-9.7
+20
-15
-60
DS(ON)
DSS
Value
4.0
65
AP15P15GI
TO-220CFM(I)
180mΩ
200810031
-140V
-15A
Units
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP15P15GI Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP15P15GI RoHS-compliant Product BV -140V DSS R 180mΩ DS(ON) I -15A TO-220CFM(I) S Rating Units -140 ...

Page 2

... AP15P15GI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 -10V G 2.0 1.6 1.2 0.8 0 -50 T Fig 4. Normalized On-Resistance 1.4 1.2 1 0.8 0.6 0.4 0.2 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP15P15GI -10V o C -7.0V -6.0V -5. -4. Drain-to-Source Voltage ( 100 o , Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP15P15GI Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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