AP15P15GM-HF Advanced Power Electronics Corp., AP15P15GM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP15P15GM-HF

Manufacturer Part Number
AP15P15GM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP15P15GM-HF

Vds
-140V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
180
Qg (nc)
51
Qgs (nc)
6
Qgd (nc)
12
Id(a)
-2.7
Pd(w)
2.5
Configuration
Single P
Package
SO-8
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Absolute Maximum Ratings
Thermal Data
Description
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
STG
J
DS
GS
D
@T
@T
@T
A
A
A
=25℃
=70℃
=25℃
Symbol
Symbol
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D
3
3
D
SO-8
D
D
S
S
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
-140
+20
-2.7
-2.1
-20
2.5
AP15P15GM-HF
DS(ON)
DSS
Value
50
D
S
180mΩ
200911041
-140V
-2.7A
Units
℃/W
Unit
W
V
V
A
A
A
1

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AP15P15GM-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP15P15GM-HF Halogen-Free Product BV -140V DSS R 180mΩ DS(ON) I -2. Rating Units -140 V +20 V -2.7 A -2.1 ...

Page 2

... AP15P15GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 =-10V G 2.0 1.6 1.2 0.8 0.4 10 -50 T Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP15P15GM-HF -10V o C -7.0V -6.0V -5. 4. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 150 o T ...

Page 4

... AP15P15GM- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON) 1 0 Single Pulse 0.001 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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