AP18P10GI Advanced Power Electronics Corp., AP18P10GI Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP18P10GI

Manufacturer Part Number
AP18P10GI
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP18P10GI

Vds
-100V
Vgs
±32V
Rds(on) / Max(m?) Vgs@10v
160
Rds(on) / Max(m?) Vgs@4.5v
200
Qg (nc)
16
Qgs (nc)
4.4
Qgd (nc)
8.7
Id(a)
-12
Pd(w)
31.25
Configuration
Single P
Package
TO-220CFM

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP18P10GI
Manufacturer:
ANPC
Quantity:
200
Part Number:
AP18P10GI
Manufacturer:
INFINEON
Quantity:
3 000
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
The TO-220CFM isolation package is widely preferred for commercial
-industrial through hole applications.
Absolute Maximum Ratings
Thermal Data
D
D
DM
AR
DS
GS
D
AS
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
D
@ 10V
@ 10V
2
S
TO-220CFM(I)
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
31.25
G
D
-100
0.25
±32
-12
-10
-48
40
DS(ON)
-9
DSS
Value
4.0
65
AP18P10GI
D
S
201022073-1/4
160mΩ
-100V
-12A
Units
W/℃
Units
℃/W
℃/W
W
mJ
V
V
A
A
A
A

Related parts for AP18P10GI

AP18P10GI Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G D TO-220CFM(I) S Parameter @ 10V GS @ 10V Parameter AP18P10GI RoHS-compliant Product BV -100V DSS R 160mΩ DS(ON) I -12A Rating Units -100 ±32 ...

Page 2

... AP18P10GI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 -10V G 1.6 1.2 0.8 0.4 10 -50 T Fig 4. Normalized On-Resistance 2.0 1 1.0 0.5 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP18P10GI -10V -7. -5.0V -4. -3. Drain-to-Source Voltage ( 100 o , Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP18P10GI Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = 12.5 10 7 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO LOGO 18P10GI YWWSSS A A SYMBOLS φ e 1.All Dimensions Are in Millimeters 2.Dimension Does Not Include Mold Protrusions. ...

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