AP25P15GS-HF Advanced Power Electronics Corp., AP25P15GS-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP25P15GS-HF

Manufacturer Part Number
AP25P15GS-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP25P15GS-HF

Vds
-140V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
95
Qg (nc)
90
Qgs (nc)
9
Qgd (nc)
17
Id(a)
-23
Pd(w)
96
Configuration
Single P
Package
TO-263
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
-14.5
D
-140
+20
-23
-80
96
DS(ON)
AP25P15GS-HF
G D
DSS
Value
1.3
40
S
TO-263(S)
95mΩ
200908191
-140V
-23A
Units
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP25P15GS-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP25P15GS-HF RoHS-compliant Product BV -140V DSS R 95mΩ DS(ON) I -23A TO-263(S) S Rating Units ...

Page 2

... AP25P15GS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 -10V G 2.0 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.4 1.2 1.0 C 0.8 0.6 0.4 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP25P15GS-HF -10V o C -7.0V -6.0V -5. -4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP25P15GS- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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