AP30P10GS Advanced Power Electronics Corp., AP30P10GS Datasheet - Page 4

• Manufacturer Part Number: AP30P10GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP30P10GS

• Vds: -100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 100
• Qg (nc): 50
• Qgs (nc): 7.5
• Qgd (nc): 16.5
• Id(a): -25
• Pd(w): 89
• Configuration: Single P
• Package: TO-263

AP30P10GS
100
10
15
12
1
0
9
6
3
0
0.1
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Single Pulse
10%
90%
V
V
T
DS
GS
c
=25
10
-V
DS
o
Q
C
V
1
I
t
, Drain-to-Source Voltage (V)
G
d(on)
DS
D
= - 18 A
, Total Gate Charge (nC)
20
= - 80 V
t
r
30
10
40
t
d(off)
100
100us
1ms
10ms
100ms
DC
50
t
f
1000
60
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
10
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
-10V
Fig 12. Gate Charge Waveform
0.02
0.05
0.01
V
Duty factor=0.5
Single Pulse
0.1
0.2
G
5
0.0001
Q
-V
GS
DS
9
t , Pulse Width (s)
0.001
, Drain-to-Source Voltage (V)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
T
f=1.0MHz
x R
1
thjc
25
+ T
Q
C
C
C
C
oss
iss
rss
10
29
4