AP80T10GP-HF Advanced Power Electronics Corp., AP80T10GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP80T10GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP80T10GP-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9.5
• Qg (nc): 115
• Qgs (nc): 30
• Qgd (nc): 48
• Id(a): 85
• Pd(w): 166
• Configuration: Single N
• Package: TO-220

250
200
150
100
1.2
1.1
0.9
0.8
50
40
30
20
10
0
0
1
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
0.2
T
V
Temperature
j
4
V
DS
=175
0
SD
T
, Drain-to-Source Voltage (V)
Reverse Diode
0.4
j
, Source-to-Drain Voltage (V)
o
, Junction Temperature (
C
8
50
0.6
T
C
= 25
0.8
o
12
DSS
C
100
T
j
=25
v.s. Junction
1
o
16
V
o
C
C)
150
G
1.2
= 6.0V
7.0V
9.0V
8.0V
10V
20
1.4
200
160
120
Fig 2. Typical Output Characteristics
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.4
1.2
0.8
0.6
0.4
0.2
80
40
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
0
1
-50
0
-50
I
V
T
D
G
C
=40A
=10V
= 1 75
Junction Temperature
v.s. Junction Temperature
V
2
0
0
DS
T
T
o
C
j
, Drain-to-Source Voltage (V)
j
,Junction Temperature (
, Junction Temperature (
50
4
50
AP80T10GP-HF
100
100
6
o
o
150
150
C)
8
C)
V
G
= 6.0V
9.0V
8.0V
7.0V
10V
200
10
200
3