AP9998GS-HF Advanced Power Electronics Corp., AP9998GS-HF Datasheet - Page 3

• Manufacturer Part Number: AP9998GS-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9998GS-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Qg (nc): 30
• Qgs (nc): 7
• Qgd (nc): 13
• Id(a): 44
• Pd(w): 3.13
• Configuration: Single N
• Package: TO-263

150
125
100
1.4
1.2
0.8
0.6
30
20
10
75
50
25
1
0
0
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
I
T
D
=1mA
C
=25
0.2
Temperature
Reverse Diode
4
o
T
V
V
C
j
0
SD
DS
, Junction Temperature (
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.4
T
j
=150
8
o
50
0.6
C
DSS
12
0.8
v.s. Junction
T
100
o
j
C)
=25
16
V
1
G
o
=6.0V
C
9.0V
8.0V
7.0V
10V
150
1.2
20
100
1.8
1.2
0.6
0.0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
80
60
40
20
0
0
-50
-50
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
T
V
I
D
D
C
G
=250uA
=24A
= 150
=10V
Junction Temperature
V
v.s. Junction Temperature
DS
o
T
C
T
4
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
8
50
50
AP9998GS-HF
100
12
100
o
o
V
C)
C)
G
=6.0V
9.0V
8.0V
7.0V
10V
150
16
150
3