AP10P10GH-HF Advanced Power Electronics Corp., AP10P10GH-HF Datasheet - Page 3

• Manufacturer Part Number: AP10P10GH-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP10P10GH-HF

• Vds: -100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 500
• Rds(on) / Max(m?) Vgs@4.5v: 600
• Qg (nc): 6
• Qgs (nc): 1.5
• Qgd (nc): 3.2
• Id(a): -4.6
• Pd(w): 20.8
• Configuration: Single P
• Package: TO-252

460
440
420
400
380
360
3.0
2.0
1.0
0.0
14
12
10
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
-V
0.2
4
-V
-V
Reverse Diode
o
DS
SD
C
GS
4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T
, Gate-to-Source Voltage (V)
j
0.4
8
=150
o
C
0.6
12
6
T
I
D
C
=25
= -2 A
0.8
16
℃
8
V
T
G
j
20
=25
1
= - 4 .0 V
-5.0V
-7.0V
-6.0V
-10V
o
C
1.2
24
10
2.4
2.0
1.6
1.2
0.8
0.4
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
0
-50
-50
Fig 6. Gate Threshold Voltage v.s.
I
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
V
D
D
G
= -250uA
T
= -3 A
= - 10V
C
= 150
2
Junction Temperature
-V
v.s. Junction Temperature
T
T
DS
j
j
0
0
o
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
C
4
AP10P10GH/J-HF
6
50
50
8
100
100
V
o
o
C)
G
C)
= - 4 .0 V
10
- 5.0 V
- 7 .0V
- 6 .0V
-10V
12
150
150
3