AP18N20GJ-HF Advanced Power Electronics Corp., AP18N20GJ-HF Datasheet - Page 3

• Manufacturer Part Number: AP18N20GJ-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP18N20GJ-HF

• Vds: 200V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 170
• Qg (nc): 19
• Qgs (nc): 5
• Qgd (nc): 6
• Id(a): 18
• Pd(w): 89
• Configuration: Single N
• Package: TO-251

600
520
440
360
280
200
120
40
30
20
10
14
12
10
0
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
0.2
=25
V
T
Reverse Diode
DS
j
V
V
=150
o
C
SD
4
4
GS
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
C
0.6
8
6
T
0.8
I
C
D
=25
=5A
T
o
j
=25
C
1
12
8
o
V
C
G
1.2
= 6 .0V
16V
12V
10V
8.0V
16
10
1.4
2.8
2.4
1.6
1.2
0.8
0.4
1.5
1.3
1.1
0.9
0.7
0.5
30
20
10
2
0
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
GS
D
T
=8A
=10V
C
=150
v.s. Junction Temperature
T
Junction Temperature
4
V
j
T
, Junction Temperature (
DS
o
0
0
j
C
, Junction Temperature (
, Drain-to-Source Voltage (V)
AP18N20GH/J-HF
8
50
50
12
o
100
100
C )
V
o
16
C )
G
= 6 .0V
16V
12V
10V
8.0V
150
150
20
3