AP02N60P Advanced Power Electronics Corp., AP02N60P Datasheet - Page 2

• Manufacturer Part Number: AP02N60P
• Description: The TO-220 package is universally preferred for all commercial-industrial applications
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP02N60P

• Vds: 600V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 8000
• Qg (nc): 14
• Qgs (nc): 2
• Qgd (nc): 8.5
• Id(a): 2
• Pd(w): 39
• Configuration: Single N
• Package: TO-220

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
3.Pulse width <300us , duty cycle <2%.
AP02N60P
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
S
SM
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
j
=25
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
Forward On Voltage
o
C , V
DD
=50V , L=50mH , R
Parameter
Parameter
3
3
3
j
j
j
=25
=150
=25
G
=25Ω , I
o
C)
o
C)
o
C(unless otherwise specified)
1
AS
V
Reference to 25℃, I
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
=1.6A.
D
D
j
GS
GS
DS
DS
DS
DS
GS
DS
GS
DD
G
D
GS
DS
D
=2A
=2A
=25℃, I
=V
=150Ω
=10Ω,V
=0V, I
=10V, I
=V
=10V, I
=600V, V
=480V
=±30V
=480V
=10V
=300V
=0V
=25V
G
GS
=0V , V
Test Conditions
Test Conditions
, I
D
S
,
D
=2A, V
=250uA
D
D
GS
V
=250uA
=1A
=1A
GS
GS
=10V
S
=0V
=1.5V
=0V
GS
=0V
D
=1mA
Min.
Min.
600
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
155
0.6
0.2
8.5
9.5
14
12
21
27
14
2
9
-
-
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
100
240
1.5
10
20
8
4
2
6
-
-
-
-
-
-
-
-
-
-
-
V/℃
uA
uA
nA
nC
nC
nC
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
S
A
A
V
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