AP09N70I-H-HF Advanced Power Electronics Corp., AP09N70I-H-HF Datasheet - Page 4

• Manufacturer Part Number: AP09N70I-H-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N70I-H-HF

• Vds: 700V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 850
• Qg (nc): 44
• Qgs (nc): 11
• Qgd (nc): 12
• Id(a): 8.3
• Pd(w): 1.92
• Configuration: Single N
• Package: TO-220CFM

AP09N70I-H-HF
0.01
100
16
12
0.1
10
8
4
0
1
0
1
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Operation in this area
limited by R
90%
10%
V
V
Single Pulse
GS
I
T
DS
D
c
DS(ON)
=9A
=25
V
Q
DS
o
10
t
G
C
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
V
20
V
DS
DS
DS
t
=320V
r
=400V
=480V
100
40
t
d(off)
1000
100us
1ms
10ms
100ms
1s
DC
t
f
10000
60
Fig 10. Effective Transient Thermal Impedance
10000
0.01
100
0.1
1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
0.05
0.2
0.1
0.02
0.01
Duty factor=0.5
G
Single Pulse
5
0.001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.01
Q
13
Q
Charge
G
GD
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
1
f=1.0MHz
T
x R
25
thjc
C
+ T
C
C
Q
C
iss
rss
oss
29
10
4