AP16N50W Advanced Power Electronics Corp., AP16N50W Datasheet - Page 3

• Manufacturer Part Number: AP16N50W
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP16N50W

• Vds: 500V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 400
• Qg (nc): 33
• Qgs (nc): 11
• Qgd (nc): 9
• Id(a): 16
• Pd(w): 250
• Configuration: Single N
• Package: TO-3P

1.2
1.1
0.9
0.8
10
30
20
10
8
6
4
2
0
0
1
0.0
-50
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
T
Fig 5. Forward Characteristic of
C
=25
0.2
V
o
Temperature
Reverse Diode
4.0
C
DS
T
V
T
j
, Drain-to-Source Voltage (V)
0
SD
j
, Junction Temperature (
=150
, Source-to-Drain Voltage (V)
0.4
o
8.0
C
0.6
50
12.0
DSS
0.8
v.s. Junction
T
100
o
j
V
16.0
C)
=25
G
1
= 6.0 V
o
16 V
7.0V
C
12 V
10V
20.0
1.2
150
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.5
1.3
1.1
0.9
0.7
0.5
16
12
8
4
0
Fig 4. Normalized On-Resistance
0.0
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
T
C
V
I
=150
G
D
4.0
=10V
=6.5A
v.s. Junction Temperature
V
o
DS
T
Junction Temperature
C
j
T
0
0
, Drain-to-Source Voltage (V)
, Junction Temperature (
8.0
j
, Junction Temperature (
12.0
50
50
16.0
AP16N50W
20.0
100
100
o
C )
V
o
C)
G
24.0
= 6.0V
7.0V
16V
12V
10V
28.0
150
150
3