AP2764AI Advanced Power Electronics Corp., AP2764AI Datasheet
AP2764AI
Specifications of AP2764AI
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AP2764AI Summary of contents
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... Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP2764AI RoHS-compliant Product BV 600V DSS R 1.1Ω DS(ON TO-220CFM(I) Rating Units 600 ...
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... AP2764AI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics =10V 150 - Fig 4. Normalized On-Resistance 3.2 2.8 C 2.4 2 1.6 1.2 1.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. AP2764AI o 10V C 5.0V 4.5V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
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... AP2764AI =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...