IRF840S Advanced Power Electronics Corp., IRF840S Datasheet - Page 4

• Manufacturer Part Number: IRF840S
• Manufacturer: Advanced Power Electronics Corp.

Specifications of IRF840S

• Vds: 500V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 850
• Qg (nc): 45
• Qgs (nc): 7
• Qgd (nc): 25
• Id(a): 8
• Pd(w): 125
• Configuration: Single N
• Package: TO-263

IRF840S
100
0.1
12
10
10
8
6
4
2
0
1
0
1
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
Single Pulse
V
T
V
GS
c
DS
=25
10
I
V
V
D
o
V
DS
Q
=8A
DS
C
V
DS
t
=100V
G
d(on)
DS
, Drain-to-Source Voltage (V)
=250V
, Total Gate Charge (nC)
20
10
=400V
t
r
30
100
40
t
d(off)
t
f
50
100ms
100us
10ms
1ms
DC
1000
60
Fig 10. Effective Transient Thermal Impedance
2400
2000
1600
1200
800
400
0.01
0.1
0
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
0.02
0.01
Duty factor=0.5
0.05
0.2
0.1
Single Pulse
G
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
0.1
f=1.0MHz
T
x R
thjc
25
+ T
C
Q
C
C
C
oss
rss
iss
1
29
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