IRF830 Advanced Power Electronics Corp., IRF830 Datasheet - Page 4
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IRF830
Manufacturer Part Number
IRF830
Description
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.IRF830.pdf
(4 pages)
Specifications of IRF830
Vds
500V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
1500
Qg (nc)
28
Qgs (nc)
4
Qgd (nc)
16
Id(a)
4.5
Pd(w)
74
Configuration
Single N
Package
TO-220
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IRF830
100
0.1
12
10
10
8
6
4
2
0
1
0
1
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
V
I
GS
Single Pulse
DS
D
T
=3.1A
c
=25
V
V
Q
V
DS
10
DS
t
o
G
V
d(on)
DS
=100V
C
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
=250V
10
=400V
t
r
20
100
t
d(off)
30
t
f
100us
100m
10ms
1ms
DC
1s
1000
40
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
10
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
0.02
0.01
Duty factor=0.5
0.05
0.2
0.1
Single Pulse
G
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
0.1
T
f=1.0MHz
x R
thjc
25
+ T
C
C
C
Q
C
iss
oss
rss
1
29
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