IRF840 Advanced Power Electronics Corp., IRF840 Datasheet - Page 2

APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost

IRF840

Manufacturer Part Number
IRF840
Description
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of IRF840

Vds
500V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
850
Qg (nc)
45
Qgs (nc)
7
Qgd (nc)
25
Id(a)
8
Pd(w)
125
Configuration
Single N
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF840
Manufacturer:
IR
Quantity:
5 510
Part Number:
IRF840
Manufacturer:
ST
0
Part Number:
IRF840
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF840
Quantity:
10 000
Part Number:
IRF840(HJ)
Manufacturer:
华晶
Quantity:
20 000
Part Number:
IRF840(SAM)
Manufacturer:
SAMSUNG
Quantity:
581
Part Number:
IRF840-ST
Manufacturer:
ST
0
Part Number:
IRF840A
Manufacturer:
IR
Quantity:
4 250
Part Number:
IRF840A
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF840A
Manufacturer:
ST
0
Part Number:
IRF840AL
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF840ALPBF
Quantity:
750
Company:
Part Number:
IRF840ALPBF
Quantity:
70 000
Part Number:
IRF840APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRF840APBF
Quantity:
39 200
Company:
Part Number:
IRF840APBF
Quantity:
205 000
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting T
3.Pulse test
IRF840
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
j
=25
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
o
C , V
DD
=50V , L=10mH , R
Parameter
Parameter
3
3
3
3
j
j
j
=25
=125
=25
G
=25Ω
o
C)
o
C)
o
C(unless otherwise specified)
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
T
I
dI/dt=100A/µs
D
D
S
j
GS
GS
DS
DS
DS
DS
GS
DS
GS
DD
GS
DS
G
D
=8A
=8A
=25℃, I
=8A,
=31Ω
=9.1Ω,V
=0V, I
=10V, I
=V
=10V, I
=500V, V
=400V
=±20V
=400V
=10V
=250V
=0V
=25V
GS
V
Test Conditions
Test Conditions
, I
GS
D
S
,
D
=8A, V
=1mA
D
D
V
=0
GS
=250uA
=4.8A
=4.8A
GS
GS
=10V
V
=0V
=0V
,
GS
=0V
Min.
Min.
500
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1250 2000
Typ.
Typ.
270
515
4.2
1.6
8.6
45
25
12
31
48
33
85
7
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
0.85
250
2.4
72
1.5
25
4
-
-
-
-
-
-
-
-
-
-
-
-
uA
uA
nA
nC
nC
nC
uC
pF
pF
pF
Ω
ns
ns
ns
ns
ns
V
V
S
V
2/4

Related parts for IRF840