SEMiX223GD12Vc SEMIKRON, SEMiX223GD12Vc Datasheet - Page 2

• Manufacturer Part Number: SEMiX223GD12Vc
• Manufacturer: SEMIKRON

Specifications of SEMiX223GD12Vc

• Family/system: SEMiX
• Voltage (v): 1200
• Current (a): 225
• Chip-type: V-IGBT
• Case: SEMiX 33c

SEMiX223GD12Vc
SEMiX223GD12Vc
Features
• Homogeneous Si
• V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
• Product reliability results are valid for
• Dynamic values apply to the
2
SEMiX
coefficient
max.
T
following combination of resistors:
R
R
R
R
j
CE(sat)
Gon,main
Goff,main
G,X
E,X
=150°C
= 0,5 
= 2,2 
with positive temperature
= 2,9 
= 2,9 
®
33c
GD
C
=125°C
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
Temperatur Sensor
R
B
RRM
F
CE
F
F0
rr
th(j-c)
CC'+EE'
th(c-s)
100
100/125
rr
s
t
= V
EC
Rev. 2 – 16.02.2011
I
V
chip
I
di/dt
V
V
res., terminal-chip
Conditions
per diode
per module
to heat sink (M5)
T
R
F
F
GE
GE
CC
c
(T)
= 225 A
= 225 A
=100°C (R
=R
= 0 V
off
= -15 V
= 600 V
= 3400 A/µs
100
exp[B
25
=5 k)
100/125
T
T
T
T
T
T
T
T
T
T
T
to terminals (M6)
(1/T-1/T
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
100
)]; T[K];
min.
1.1
0.7
3.6
4.7
2.5
3
493 ± 5%
0.014
3550
±2%
typ.
39.4
16.4
210
2.2
2.1
1.3
0.9
3.9
5.4
0.7
20
1
© by SEMIKRON
max.
2.49
0.23
900
2.4
1.5
1.1
4.4
5.9
5
5
Unit
K/W
K/W
m
m
m
m
Nm
Nm
Nm
µC
mJ
nH

V
V
V
V
A
K
g