SEMiX303GD12Vc SEMIKRON, SEMiX303GD12Vc Datasheet
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Manufacturer Part Number
SEMiX303GD12Vc
Specifications of SEMiX303GD12Vc
Family/system
SEMiX
Voltage (v)
1200
Current (a)
300
Chip-type
V-IGBT
SEMiX303GD12Vc
SEMiX303GD12Vc
Features
• Homogeneous Si
• V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
• Product reliability results are valid for
• Dynamic values apply to the
© by SEMIKRON
SEMiX
coefficient
max.
T
following combination of resistors:
R
R
R
R
j
CE(sat)
Gon,main
Goff,main
G,X
E,X
=150°C
= 1,0
= 2,2
with positive temperature
= 1,0
= 1,0
®
33c
GD
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
F
Fnom
FRM
FSM
t(RMS)
CES
psc
d(on)
r
d(off)
f
CE
CES
GES
j
j
stg
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 2 – 16.02.2011
T
V
V
V
T
t
T
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
di/dt
di/dt
du/dt
µs
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
terminal
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 300 A
= 25 °C
= 300 A
=V
= 1200 V
= 25 V
= 600 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= ±15 V
on
off
= 3xI
= 3xI
off
≤ 1200 V
= 2.1
= 2.1
= 4200 A/µs
= 2600 A/µs
CE
= 6600 V/
= 80 °C
, I
Fnom
Cnom
C
= 12 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 125 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5.5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
1485
4000
3300
typ.
1.75
0.94
0.88
18.0
1.77
1.77
2.50
26.5
36.3
448
342
300
900
327
244
300
900
600
470
665
109
2.2
2.7
4.4
0.1
10
72
6
max.
1.04
0.98
2.2
2.5
3.9
5.1
6.5
0.3
0.1
Unit
Unit
K/W
m
m
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
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SEMiX303GD12Vc Summary of contents
... SEMiX303GD12Vc SEMiX ® 33c SEMiX303GD12Vc Features • Homogeneous Si • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125°C C max ...
... SEMiX303GD12Vc SEMiX ® 33c SEMiX303GD12Vc Features • Homogeneous Si • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125°C C max ...
... SEMiX303GD12Vc Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 16.02.2011 = ...
... SEMiX303GD12Vc Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 16.02.2011 ...
... SEMiX303GD12Vc SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...
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