SKiM455GD12T4D1 SEMIKRON, SKiM455GD12T4D1 Datasheet

Page 1

... SKiM455GD12T4D1 ® SKiM 5 Trench IGBT modules SKiM455GD12T4D1 Preliminary Data Features Typical Applications* Remarks GD 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 03-03-2008 LAN Values Units min. typ. max. Units © by SEMIKRON ...

Page 2

... SKiM455GD12T4D1 ® SKiM 5 Trench IGBT modules SKiM455GD12T4D1 Preliminary Data Features Typical Applications* Remarks GD 2 Characteristics Symbol Conditions Inverse Diode Module Temperature sensor This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics ...

Page 3

... SKiM455GD12T4D1 Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = Fig. 5 Typ. transfer characteristic 3 Fig. 2 Rated current vs. temperature I CC'+ EE' Fig. 4 Typ. turn-on /-off energy = f (R Fig. 6 Typ. gate charge characteristic 03-03-2008 LAN = © by SEMIKRON ...

Page 4

... SKiM455GD12T4D1 Fig. 7 Typ. switching times vs Fig. 9 Transient thermal impedance Fig. 11 Typ. CAL diode peak reverse recovery current 4 Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 CAL diode forward characteristic Fig. 12 Typ. CAL diode reverse recovery charge 03-03-2008 LAN G © by SEMIKRON ...

Page 5

... SKiM455GD12T4D1 UL recognized file 5 03-03-2008 LAN no 532 © by SEMIKRON ...