IRG4PH50UD International Rectifier, IRG4PH50UD Datasheet - Page 2

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IRG4PH50UD

Manufacturer Part Number
IRG4PH50UD
Description
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH50UD

Package
TO-247
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
45
Ic @ 100c (a)
24
Vce(on)@25c Typ (v)
2.78
Vce(on)@25c Max (v)
3.70
Ets Typ (mj)
3.6
Ets Max (mj)
4.1
Qrr Typ Nc 25c
260
Qrr Max Nc 25c
675
Vf Typ
2.50
Pd @25c (w)
200
Environmental Options
PbF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH50UD
Manufacturer:
IR
Quantity:
505
Part Number:
IRG4PH50UD
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4PH50UDPBF
Manufacturer:
Infineon Technologies
Quantity:
13 948
IRG4PH50UD
Switching Characteristics @ T
Electrical Characteristics @ T
V
∆V
V
V
∆V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
E
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
gc
rr
(rec)M
(BR)CES
2
GE(th)
/dt
/∆T
/∆T
J
J
Gate - Emitter Charge (turn-on)
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
23
3600
1.20
2.56
2.78
3.20
2.54
2.10
1.50
3.60
6.38
160
110
180
240
330
160
164
260
680 1838
120
-13
2.5
2.1
5.8
8.3
35
27
53
47
24
46
27
13
31
90
76
6500
±100
250
250
170
260
135
245
675
3.5
3.7
6.0
3.5
3.0
4.6
40
80
10
15
— mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
pF
V
V
S
V
ns
ns
ns
A
V
V
I
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 24A, T
= 16A, T
= 24A, V
= 24A, V
= 20A
= 24A
= 45A
= 16A
= 24A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
See Fig.
See Fig.
= 150°C
= 150°C
Conditions
Conditions
See Fig.
See Fig.
= 250µA
= 1.0mA
G
G
C
= 250µA
= 250µA
= 800V
= 800V
= 1200V
= 1200V, T
See Fig. 11, 18
= 24A
= 5.0Ω
= 5.0Ω
14
15
17
16
See Fig. 8
See Fig. 7
www.irf.com
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
GE
R
I
J
F
= 150°C
= 200V
= 16A
= 15V