IRG7PH50U-EP International Rectifier, IRG7PH50U-EP Datasheet - Page 6

• Manufacturer Part Number: IRG7PH50U-EP
• Description: 1200V Low VCEon Trench Discrete IGBT in a TO-247AD package
• Manufacturer: International Rectifier

Specifications of IRG7PH50U-EP

• Package: TO-247AD
• Circuit: Discrete
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 140
• Ic @ 100c (a): 90
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 5.8
• Ets Max (mj): 7.8
• Pd @25c (w): 556
• Environmental Options: PbF

IRG7PH50UPbF/IRG7PH50U-EP
6
10000
1000
100
10
0.0001
0.001
0.01
Fig. 17 - Typ. Capacitance vs. V
0
0.1
1E-006
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
100
Coes
D = 0.50
Cies
Cres
V
GE
0.05
200
0.20
0.10
0.01
0.02
= 0V; f = 1MHz
SINGLE PULSE
( THERMAL RESPONSE )
V CE (V)
300
1E-005
400
500
CE
600
t 1 , Rectangular Pulse Duration (sec)
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
1
R
1
τ
2
R
τ
0.001
2
2
R
2
16
14
12
10
8
6
4
2
0
Fig. 18- Typical Gate Charge vs. V
0
R
τ
3
3
R
τ
3
3
50
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Q G , Total Gate Charge (nC)
R
4
τ
4
R
4
V CES = 600V
V CES = 400V
4
τ
C
100
τ
Ri (°C/W) τi (sec)
0.01
I
CE
0.00296
0.08150
0.11707
0.06917
= 50A
150
0.000009
0.000180
0.003342
0.017016
200
250
0.1
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GE
300