IRG4PH40KD International Rectifier, IRG4PH40KD Datasheet

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IRG4PH40KD

Manufacturer Part Number
IRG4PH40KD
Description
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH40KD

Package
TO-247
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
30
Ic @ 100c (a)
15
Vce(on)@25c Typ (v)
2.74
Vce(on)@25c Max (v)
3.40
Ets Typ (mj)
2.43
Ets Max (mj)
2.8
Qrr Typ Nc 25c
140
Qrr Max Nc 25c
380
Vf Typ
2.60
Pd @25c (w)
160
Environmental Options
PbF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH40KD
Manufacturer:
IR
Quantity:
505
Part Number:
IRG4PH40KD
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4PH40KDPBF
Manufacturer:
EXAR
Quantity:
340
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Tighter parameter distribution and higher efficiency
• IGBT co-packaged with HEXFRED
Benefits
• Latest generation 4 IGBT's offer highest power density
• HEXFRED
• This part replaces the IRGPH40KD2 and IRGPH40MD2
• For hints see design tip 97003
Thermal Resistance
Absolute Maximum Ratings
Features
Features
Features
Features
Features
R
R
R
R
Wt
V
I
I
I
I
I
I
t
V
P
P
T
T
Minimized recovery characteristics reduce noise, EMI and
t
V
ultrasoft recovery antiparallel diodes
products
C
C
CM
LM
F
FM
sc
www.irf.com
sc
than previous generations
switching losses
STG
switching speed
motor controls possible
CES
GE
D
D
J
θJC
θJC
θCS
θJA
GE
@ T
@ T
@ T
@ T
@ T
=10µs, V
= 15V
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
CC
diodes optimized for performance with IGBTs.
= 720V , T
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
J
= 125°C,
TM
ultrafast,
G
n-ch an nel
Min.
–––
–––
–––
–––
–––
300 (0.063 in. (1.6mm) from case)
IRG4PH40KD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
TO-247AC
Max.
6 (0.21)
1200
± 20
130
160
8.0
Typ.
30
15
60
60
10
65
0.24
–––
–––
–––
Short Circuit Rated
@V
V
CE(on) typ.
V
GE
UltraFast IGBT
CES
= 15V, I
Max.
0.77
–––
–––
= 1200V
1.7
40
PD- 91577B
= 2.74V
C
= 15A
Units
Units
2/7/2000
g (oz)
°C/W
µs
°C
V
A
V
W
1

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IRG4PH40KD Summary of contents

Page 1

... Wt Weight www.irf.com G n-ch an nel TM ultrafast, 300 (0.063 in. (1.6mm) from case) Min. ––– ––– ––– ––– ––– PD- 91577B IRG4PH40KD Short Circuit Rated UltraFast IGBT 1200V CES = 2.74V V CE(on) typ 15V 15A TO-247AC Max ...

Page 2

... IRG4PH40KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 Fig Typical Transfer Characteristics IRG4PH40KD For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = ° ...

Page 4

... IRG4PH40KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.5 3.0 2.5 2.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs ...

Page 5

... 100 0 Fig Typical Gate Charge vs.  100 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4PH40KD = 400V = 15A Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω = Ohm 10 = 15V 800V = 480V  ...

Page 6

... IRG4PH40KD  14 Ω Ohm 150 C ° J 800V V = 480V 15V Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6  100 ...

Page 7

... Fig Typical Recovery Current vs /dt Fig Typical di f IRG4PH40KD ° ° 8. / /µ . ...

Page 8

... IRG4PH40KD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...

Page 9

... V Figure 19. www.irf.com D.U. 800V Figure 20. IRG4PH40KD 800V @25° ...

Page 10

... IRG4PH40KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline — TO-247AC (. (. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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