IRG7IC28UPBF International Rectifier, IRG7IC28UPBF Datasheet - Page 5

• Manufacturer Part Number: IRG7IC28UPBF
• Description: 600V Discrete PDP Trench IGBT in a TO-220AB package
• Manufacturer: International Rectifier

Specifications of IRG7IC28UPBF

• Package: TO-220AB
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 25
• Ic @ 100c (a): 12
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 1.95
• Pd @25c (w): 40
• Environmental Options: PbF

Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
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100000
10000
1000
100
0.001
10
0.01
0.1
10
1E-006
0
1
V CE , Collector-toEmitter-Voltage(V)
D = 0.50
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Coes
100
Cres
Cies
0.05
0.01
0.02
0.20
0.10
V GS = 0V,
C ies
C res = C gc
C oes = C ce + C gc
1E-005
= C ge + C gd , C ce SHORTED
200
SINGLE PULSE
( THERMAL RESPONSE )
T
J
= 150°C; L = 250µH; V
f = 1 MHZ
300
0.0001
6000
5000
4000
3000
2000
1000
0
Fig. 15 - Typ. Energy Loss vs. I
400
0
10
t 1 , Rectangular Pulse Duration (sec)
0.001
500
20
CE
30
τ
J
τ
= 400V, R
J
τ
1
Ci= τi/Ri
τ
40
1
Ci
I C (A)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
E OFF
0.01
i/Ri
R
50
1
R
1
G
60
16
14
12
10
E ON
τ
= 22Ω; V
8
6
4
2
0
2
R
τ
2
2
R
0
70
2
C
0.1
I C = 40A
10
80
R
τ
V CES = 120V
V CES = 300V
V CES = 400V
3
3
R
GE
τ
3
3
Q G , Total Gate Charge (nC)
90
= 15V
20
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
R
4
τ
4
R
4
IRG7IC28UPbF
4
1
30
τ
C
τ
Ri (°C/W) τi (sec)
0.19973
0.38341
1.17794
1.36892
40
50
10
0.000268
0.002261
0.154543
2.511
60
70
100
80
5