IRG4PC50UD International Rectifier, IRG4PC50UD Datasheet

no-image

IRG4PC50UD

Manufacturer Part Number
IRG4PC50UD
Description
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PC50UD

Package
TO-247
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
600
Ic @ 25c (a)
55
Ic @ 100c (a)
27
Vce(on)@25c Typ (v)
1.65
Vce(on)@25c Max (v)
2.00
Ets Typ (mj)
1.58
Ets Max (mj)
1.9
Qrr Typ Nc 25c
112
Qrr Max Nc 25c
375
Vf Typ
1.30
Pd @25c (w)
200
Environmental Options
PbF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4PC50UD
Manufacturer:
IR
Quantity:
5 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4PC50UD
Manufacturer:
IR
Quantity:
12 500
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4PC50UD-E
Manufacturer:
IR
Quantity:
5 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4PC50UDPBF
Manufacturer:
IR
Quantity:
5 600
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4PC50UDPBF
Manufacturer:
IR
Quantity:
5 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4PC50UDPBF
Manufacturer:
FSC
Quantity:
20 000
Price:
Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
Benefits
• Generation 4 IGBT's offer highest efficiencies
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
• Designed to be a "drop-in" replacement for equivalent
Thermal Resistance
• UltraFast: Optimized for high operating
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-247AC package
www.irf.com
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Wt
IGBT's . Minimized recovery characteristics require
C
C
CM
LM
F
FM
kHz in resonant mode
parameter distribution and higher efficiency than
Generation 3
available
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
industry-standard Generation 3 IR IGBT's
CES
GE
D
D
J
STG
frequencies 8-40 kHz in hard switching, >200
less/no snubbing
@ T
@ T
@ T
JC
JC
CS
JA
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
TM
ultrafast,
G
n-ch an nel
Min.
------
------
------
------
-----
300 (0.063 in. (1.6mm) from case)
IRG4PC50UD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
UltraFast CoPack IGBT
TO-247AC
Max.
6 (0.21)
± 20
600
220
220
220
200
55
27
25
78
Typ.
------
------
0.24
-----
@V
V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
0.64
0.83
------
------
40
= 600V
PD 91471B
C
1.65V
= 27A
12/30/00
Units
Units
g (oz)
°C/W
°C
W
V
A
V
1

Related parts for IRG4PC50UD

IRG4PC50UD Summary of contents

Page 1

... Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com G TM ultrafast, n-ch an nel 300 (0.063 in. (1.6mm) from case) Min. ------ ------ ------ ----- ------ PD 91471B IRG4PC50UD UltraFast CoPack IGBT 600V CES V 1.65V CE(on) typ 15V 27A TO-247AC Max. Units 600 V 55 ...

Page 2

... IRG4PC50UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ---- GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... 0° Fig Typical Transfer Characteristics IRG4PC50UD ycl ° °C sin rive a s spe cifi -on lo sses inclu de effe cts o f reve rse re cov ery ...

Page 4

... IRG4PC50UD ase Tem perature (°C) C Fig Maximum Collector Current vs. Temperature ...

Page 5

... Fig Typical Gate Charge vs 0 -60 -40 ) Fig Typical Switching Losses vs. IRG4PC50UD = 400V = 27A Total Gate Charge (nC) g Gate-to-Emitter Voltage I = 54A 27A 14A C = 5.0 = 15V ...

Page 6

... IRG4PC50UD 8 ° 6.0 4.0 2.0 0 lle c to r-to-E m itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ...

Page 7

... ° ° /dt Fig Typical di f IRG4PC50UD ° ° /µ s) ...

Page 8

... IRG4PC50UD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...

Page 9

... www.irf.com D.U. 480V IRG4PC50UD 480V @25° ...

Page 10

... IRG4PC50UD Q Repetitive rating 20V; pulse width limited by maximum junction temperature GE (figure 20 80%( 20V 10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single shot (. (. (. (. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords