CM800DZ-34H Powerex Inc, CM800DZ-34H Datasheet
CM800DZ-34H
Specifications of CM800DZ-34H
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CM800DZ-34H Summary of contents
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... NUTS 53 57 55.2 11.85 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... Insulated Type 2-elements in a pack NUTS 0. CIRCUIT DIAGRAM MOUNTING HOLES 11 ...
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... E die / dt = –1600A / s Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) ) does not exceed T j MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 1700 20 800 (Note 1) ...
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... Reverse recovery safe operating area HVIGBT MITSUBISHI ELECTRIC CORPORATION S.Iura R A S.Iura E M.Yamamoto I.Umesaki V M.Yamamoto M.Tabata Apr.8.2002 Aug.2.2002 Data Sheet (CM800DZ−34H) HVM-1005-A Page 2 Page 3 Page Page 6 Page 7 Page 8 Page 9 Page 10 Page 11 Page 12 A Page 13 Page 14 Page 15 PAGE ...
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T =25°C j 10000 8000 6000 4000 2000 0 0 Output characteristics (typical) HVIGBT 5 10 COLLECTOR-EMITTER VOLTAGE [V] HVM-1005-A V =20V GE V =15V GE V =14V GE V =12V GE V =10V ...
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V =10V CE 10000 8000 6000 4000 2000 0 0 Transfer characteristics (typical) HVIGBT 5 10 GATE-EMITTER VOLTAGE [V] HVM-1005-A T =25° =125° PAGE (P2-OU ...
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V =15V 500 Collector-emitter saturation voltage characteristics (typical) HVIGBT 1000 COLLECTOR CURRENT [A] HVM-1005-A T =125° =25°C j 1500 2000 PAGE (P2-OU ...
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T =25° Collector-emitter saturation voltage characteristics (typical) HVIGBT 10 GATE-EMITTER VOLTAGE [V] HVM-1005 1600A Ic = 800A Ic = 400A 15 20 PAGE (P2-OU) ...
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Free wheel diode forward voltage characteristics (typical) HVIGBT 1000 EMITTER CURRENT [A] HVM-1005-A T =25° =125°C j 1500 2000 PAGE (P2-OU ...
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V =15V, T =25° f=100kHz ies C : f=100kHz oes C : f=1MHz res 100 10 1 0.1 COLLECTOR-EMITTER VOLTAGE [V] Capacitance characteristics (typical) HVIGBT 1 10 HVM-1005-A C ies C oes C res 100 ...
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V =850V CC I =800A 2500 Gate charge characteristics (typical) HVIGBT 5000 GATE CHARGE [nC] HVM-1005-A 7500 10000 PAGE (P2-OU ...
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V =850V, V =±15V =3.3Ω, T =125° Inductive load 1 0.1 0.01 10 Half-bridge switching time characteristics (typical) HVIGBT =150nH S 100 1000 COLLECTOR CURRENT [A] HVM-1005-A t d(off) t d(on ...
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V =850V, V =±15V =3.3Ω, T =125° Inductive load Integrated over range of 10% 1 0.8 0.6 0.4 0 400 COLLECTOR / EMITTER CURRENT [A] Half-bridge switching energy characteristics (typical) HVIGBT ...
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V =850V, T =125° =150nH, Inductive load S IGBT drive conditions V =±15V, R =3.3Ω 0.1 10 Reverse recovery characteristics (typical) HVIGBT 100 1000 EMITTER CURRENT [A] HVM-1005-A 10000 1000 I rr ...
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NORMALIZED TRANSIENT THERMAL IMPEDANCE Transient thermal impedance characteristics HVIGBT HVM-1005-A PAGE (P2-OU ...
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V ≤1150V, V =±15V ≥3.3Ω, T =125° 2500 2000 1500 1000 500 0 0 500 COLLECTOR-EMITTER VOLTAGE [V] Turn-off switching safe operating area (SWSOA / RBSOA) HVIGBT 1000 HVM-1005-A 1500 2000 PAGE (P2-OU) 13 ...
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V ≤1150V, V =±15V ≥3.3Ω, T =125° tw≤10µs 5000 4000 3000 2000 1000 0 0 500 COLLECTOR-EMITTER VOLTAGE [V] Short circuit safe operating area (SCSOA) HVIGBT 1000 HVM-1005-A 1500 2000 PAGE (P2-OU ...
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V ≤1150V, T =125° di/dt≤1800A/µs 2000 1500 1000 500 0 0 500 EMITTER-COLLECTOR VOLTAGE [V] Reverse recovery safe operating area (RRSOA / Di-SOA) HVIGBT 1000 HVM-1005-A 1500 2000 PAGE (P2-OU ...