CM1000DUC-34NF Powerex Inc, CM1000DUC-34NF Datasheet - Page 3

• Manufacturer Part Number: CM1000DUC-34NF
• Manufacturer: Powerex Inc
• Type: Dualr

Specifications of CM1000DUC-34NF

• Prx Availability: RequestQuote
• Voltage: 1700V
• Current: 1000A
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA500-01
• Recommended Dc To Dc Converter: VLA500-01
• Interface Circuit Ref Design: BG2A

CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage (Chip)
(Without Lead Resistance)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Times
Emitter-Collector Voltage (Chip)
(Without Lead resistance)
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy Per Pulse
Turn-off Switching Energy Per Pulse
Reverse Recovery Energy Per Pulse
Internal Lead Resistance
Internal Gate Resistance
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance,
Case to Heatsink
Recommended Operating Conditions, T
Characteristics
DC Supply Voltage
Gate (-Emitter Drive) Voltage
External Gate Resistance
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).
07/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
*2
C
) and heatsink temperature (T
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R
th(j-c)
Q
j
= 25°C unless otherwise specified
*2
*2
s
) measured point is just under the chips.
V
R
R
V
V
Symbol
Symbol
R
Symbol
R
V
CE(sat)
t
t
th(j-c)
th(j-c)
I
C
GE(on)
I
GE(th)
Q
C
C
E
V
d(on)
d(off)
CES
GES
E
E
(lead)
th(c-f)
Q
t
R
EC
rr
r
oes
CC
res
t
t
rr
ies
rr
on
off
g
G
r
f
G
*1
*1
*1
*1
a
Q
D
= 25°C unless otherwise specified
j
= 25°C unless otherwise specified
V
V
I
CC
I
C
CC
C
Main Terminals-Chip, Per Switch,
Applied Across G1-Es1/G2-Es2
= 1000A, V
V
= 1000A, V
= 1000V, I
R
= 1000V, I
R
CC
V
T
Thermal Grease Applied
G
G
V
I
V
CC
j
V
I
C
E
V
GE
= 125°C, Inductive Load
Applied Across C1-E2
CE
GE
V
= 1000V, I
= 0.47Ω, Inductive Load
Switching Operation
= 0.47Ω, Inductive Load
CE
= 100mA, V
= 1000A, V
GE1
Per Clamp Diode
= 1000V, I
Per 1/2 Module
= 15V, R
Test Conditions
Test Conditions
= V
= V
= 10V, V
T
Per Switch
Per Switch
Test Conditions
Per IGBT
GE
E
= V
j
GE
C
CES
GES
= 25°C
= 1000A, V
= 1000A, V
= 15V, T
GE2
C
= 15V, T
, V
, V
G
= I
C
GE
GE
CE
GE
CE
= 0.47Ω,
= 15V,
= 1000A,
*2
E
= 0V
= 10V
= 0V
= 1000A,
= 0V
= 0V
j
j
= 125°C
GE
= 25°C
GE
*5
*6
= ±15V,
= 15V
*5
*5
13.5
Min.
Min.
Min.
–
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.47
6000
1000
272.4
250.2
172.4
90
15.0
Typ.
Typ.
Typ.
–
–
7
2.2
2.45
–
–
–
–
–
–
–
2.3
–
0.286
0.67
–
–
0.012
–
0.014
0.023
Max.
1000
2.85
Max.
Max.
1100
16.5
220
600
200
300
500
4.7
4.7
25
1
5
8
–
–
3
–
–
–
–
–
–
–
Units
Units
Units
°C/W
°C/W
°C/W
Volts
Volts
Volts
Volts
Volts
Volts
mΩ
mA
µA
nC
µC
mJ
mJ
mJ
nF
nF
nF
ns
ns
ns
ns
ns
Ω
Ω
3