CM1800DY-34S Powerex Inc, CM1800DY-34S Datasheet - Page 3

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CM1800DY-34S

Manufacturer Part Number
CM1800DY-34S
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1800DY-34S

Voltage
1700V
Current
1800A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA539
Recommended Dc To Dc Converter
VLA539

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM1800DY-34S
Manufacturer:
MITSUBISHI
Quantity:
129
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1800DY-34S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
4/12 Rev. 0
Electrical Characteristics, T
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Emitter-Collector Voltage
Emitter-Collector Voltage
Internal Lead Resistance
Internal Gate Resistance
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
*2 Case temperature (T
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
diode (FWDi).
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the chip location on page 1, Note 2.
The heatsink thermal resistance should be measured just under the chips.
C
) and heatsink temperature (T
j
= 25°C unless otherwise specified
s
) is measured on the surface
R
(Terminal)
(Terminal)
V
V
V
CC' + EE'
Symbol
(Chip)
(Chip)
V
V
CE(sat)
CE(sat)
t
t
I
I
C
Q
GE(th)
C
C
E
d(on)
d(off)
CES
GES
t
E
E
Q
EC
EC
rr
r
oes
rr
res
t
t
rr
ies
on
off
g
r
G
f
*1
*1
*1
*1
*1
V
V
V
CC
CC
CC
I
I
E
E
I
I
I
I
C
C
C
C
I
I
V
I
I
I
E
= 1800A, V
I
E
= 1800A, V
C
C
= 1000V, I
= 1000V, I
E
E
CC
= 1000V, I
= 1800A, V
= 1800A, V
= 1800A, V
= 1800A, V
T
= 1800A, V
= 1800A, V
= 1800A, V
= 1800A, V
R
R
= 1800A, V
= 1800A, V
j
Per Switch,T
V
= 150°C, Inductive Load
V
G
G
Main Terminals-Chip,
= 1000V, I
±V
GE
I
V
C
CE
= 0Ω, Inductive Load
= 0Ω, Inductive Load
CE
GE
= 180mA, V
= ±15V, R
= 10V, V
Test Conditions
Per Switch
= V
C
E
= V
GE
GE
C
GE
GE
GE
GE
= 1800A, V
= 1800A, V
GE
GE
= 1800A, V
CES
GE
GE
GE
GE
GES
C
= 0V, T
= 0V, T
C
= 15V, T
= 15V, T
= 15V, T
= 15V, T
= I
= 0V, T
= 0V, T
= 15V, T
= 15V, T
GE
= 0V, T
= 0V, T
, V
= 25°C
, V
G
E
CE
GE
= 0V
= 0Ω,
CE
= 1800A,
j
j
= 150°C
= 150°C
= 10V
GE
GE
j
j
= 0V
j
j
j
j
j
j
GE
= 0V
= 125°C
= 125°C
*2
j
j
= 125°C
= 150°C
= 125°C
= 150°C
= 25°C
= 25°C
= 25°C
= 25°C
= ±15V,
= ±15V
= 15V
*6
*6
*6
*6
*6
*6
*6
*6
*6
*6
*6
*6
Min.
5.4
8400
2.30
2.50
2.55
2.10
2.30
2.35
2.15
0.11
360
545
490
1.95
510
Typ.
6.0
2.1
2.2
2.0
1.9
1.1
Max.
1100
2.80
2.60
460
200
950
500
350
0.5
6.6
2.6
2.4
48
1
8
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
mA
mΩ
nC
µC
mJ
mJ
mJ
µA
nF
nF
nF
ns
ns
ns
ns
ns
3

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