CM1800HCB-34N Powerex Inc, CM1800HCB-34N Datasheet - Page 4
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CM1800HCB-34N
Manufacturer Part Number
CM1800HCB-34N
Description
Manufacturer
Powerex Inc
Type
IGBTr
Datasheet
1.CM1800HCB-34N.pdf
(4 pages)
Specifications of CM1800HCB-34N
Prx Availability
RequestQuote
Voltage
1700V
Current
1800A
Circuit Configuration
Single
Rohs Compliant
No
Recommended Gate Driver
VLA500K-01R
Recommended Dc To Dc Converter
VLA500K-01R
Interface Circuit Ref Design
BG2A
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM1800HCB-34N
Manufacturer:
MIT
Quantity:
20 000
4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
1200
1000
800
600
400
200
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
8
4
0
0
0
FREE-WHEEL DIODE REVERSE RECOVERY
0
0
0
ENERGY CHARACTERISTICS (TYPICAL)
I
V
T
COLLECTOR-EMITTER SATURATION
V
V
V
R
L
T
C
CC
j
S
j
GE
500
CC
GE
G(on)
= 25°C
= 1800A
COLLECTOR CURRENT, I
= 125°C
500
= 100nH
VOLTAGE CHARACTERISTICS
EMITTER CURRENT, I
= 900V
= 15V
= 900V
= ±15V
4
T
T
j
j
1000
= 0.7Ω
= 25°C
= 125°C
GATE CHARGE, V
GATE CHARGE, Q
1000
1500
(TYPICAL)
8
1500 2000
2000
12
E
, (AMPERES)
G
C
, (AMPERES)
, (µC)
2500
GE
16
2500
3000
3000
3500
20
1800
1600
1400
1200
1000
800
600
400
200
800
700
600
500
400
300
200
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0
0
0
0
V
V
R
R
L
T j = 125°C
Inductive Load
V
S
CC
GE
G(on)
G(off)
REVERSE RECOVERY SWITCHING
GE
500
ENERGY VS. GATE RESISTANCE
= 100nH
COLLECTOR CURRENT, I
FREE-WHEEL DIODE FORWARD
500
CHARACTERISTICS (TYPICAL)
CHARACTERISTICS (TYPICAL)
= 900V
= ±15V
EMITTER CURRENT, I
ENERGY CHARACTERISTICS
= 15V
HALF-BRIDGE SWITCHING
1
T
T
= 0.7Ω
= 1.7Ω
j
j
1000
= 25°C
= 125°C
1000
GATE RESISTANCE, R
1500
(TYPICAL)
2
1500 2000 2500
2000
V
V
I
L
T j = 125°C
dv/dt
Inductive Load
C
E
3
S
CC
GE
, (AMPERES)
C
= 1800A
= 100nH
, (AMPERES)
2500
= 900V
= ±15V
(off)
G
, ( Ω )
= 20-80%
4
3000
E
E
on
off
3000
3500
5
8000
7000
6000
5000
4000
3000
2000
1000
0
4000
3500
3000
2500
2000
1500
1000
500
10
10
10
10
10
1.2
1.0
0.8
0.6
0.4
0.2
0
3
0
4
2
1
0
10
10
0
-1
-3
V
V
I
L
T j = 125°C
dv/dt
Inductive Load
SINGLE PULSE
T
IGBT = R
9°K/kW
FWDI = R
13°K/kW
COLLECTOR-EMITTER VOLTAGE, V
C
V
f = 100kHz
T
S
CC
GE
C
GE
j
= 1800A
IMPEDANCE CHARACTERISTICS
COLLECTOR-EMITTER VOLTAGE
= 100nH
= 25°C
= 25°C
= 900V
= ±15V
(off)
ENERGY CHARACTERISTICS
= 0V
HALF-BRIDGE SWITCHING
1
10
GATE RESISTANCE, R
TRANSIENT THERMAL
= 20-80%
th(j-c)
th(j-c)
-2
CAPACITANCE VS.
10
(IGBT & FWDI)
Q =
0
D =
(TYPICAL)
(TYPICAL)
2
TIME, (s)
10
-1
3
10
G
1
, ( Ω )
10
CE
C
0
C
, (VOLTS)
C
4
ies
oes
res
E
E
on
off
10
10
5
2
1
4000
3500
3000
2500
2000
1500
1000
500
0
12/08