CM2400HC-34N Powerex Inc, CM2400HC-34N Datasheet - Page 2

• Manufacturer Part Number: CM2400HC-34N
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM2400HC-34N

• Prx Availability: RequestQuote
• Voltage: 1700V
• Current: 2400A
• Circuit Configuration: Single
• Rohs Compliant: No
• Recommended Gate Driver: VLA539-01R
• Interface Circuit Ref Design: BG2A

4
MAXIMUM RATINGS
V
V
I
I
I
I
P
V
T
T
T
T
ELECTRICAL CHARACTERISTICS
I
V
I
C
C
C
Q
V
t
t
E
t
t
E
V
t
Q
E
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
C
CM
E
EM
CES
GES
d(on)
r
d(off)
f
rr
th
j
op
stg
psc
CES
GES
c
iso
GE(th)
CE(sat)
on(10%)
off(10%)
EC
rec (10%)
ies
oes
res
g
rr
Symbol
Symbol
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
Item
Item
(Note 2),(Note 5)
(Note 2)
(Note 5)
(Note 5)
(Note 2)
(Note 3)
(Note 2)
(Note 2)
V
V
DC, T
Pulse
DC
Pulse
T
RMS, sinusoidal, f = 60Hz, t = 1min.
V
V
V
V
V
T
V
V
I
V
V
V
T
Inductive load
V
V
T
Inductive load
I
V
V
V
T
Inductive load
C
E
CONFIDENTIAL
GE
CE
c
CC
CE
CE
GE
CE
j
CC
GE
GE
CC
GE
j
CC
GE
j
GE
CC
GE
j
= 25 °C
= 2400 A
= 125 °C, L
= 125 °C, L
= 2400 A
= 125 °C, L
= 25 °C, IGBT part
= 0V, T
=1200V, V
= V
= 10 V, I
= 10 V, V
= 0V, T
= V
= 850 V, I
= ±15V, T
= 15 V
= 850 V, I
= ±15 V, R
= 850 V, I
= ±15 V, R
= 0 V
= 850 V, I
= ±15 V, R
c
(Note 1)
(Note 1)
= 75 °C
CES
GES
, V
, V
j
j
(Note 4)
(Note 4)
= 25 °C
= 25 °C
C
Conditions
GE
CE
GE
s
s
s
C
C
C
E
j
= 240 mA, T
CE
G(on)
G(off)
G(on)
= 25 °C
= 100 nH
= 100 nH
= 100 nH
= 2400 A
= 2400 A
= 2400 A
= 2400 A
= 0V
= 0V, T
= 0 V, f = 100 kHz
≤ V
Conditions
= 0.7 Ω
= 1.6 Ω
= 0.7 Ω
CES
j
, V
= 25°C
T
T
T
T
T
T
GE
j
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 25 °C
= 125 °C
=15V, T
j
=125°C
CM2400HC-34N
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
Min
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
19.2
24.5
2.15
2.40
0.64
0.84
2.60
2.30
0.38
Typ
352
620
−40 ~ +150
−40 ~ +125
−40 ~ +125
6.0
7.0
5.6
—
—
—
—
—
—
—
Ratings
HVM-1035-C
13100
INSULATED TYPE
4000
1700
2400
4800
2400
4800
± 20
10
Max
16.0
2.80
1.50
0.70
3.00
0.60
3.30
1.50
8.0
8.0
0.5
—
—
—
—
—
—
—
—
—
—
Unit
Unit
mA
J/P
J/P
J/P
2 of 7
µA
µC
µC
°C
°C
°C
µs
nF
nF
nF
µs
µs
µs
µs
µs
W
V
V
A
A
A
A
V
V
V
V