CM400DY-66H Powerex Inc, CM400DY-66H Datasheet - Page 3

• Manufacturer Part Number: CM400DY-66H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM400DY-66H

• Prx Availability: RequestQuote
• Voltage: 3300V
• Current: 400A
• Circuit Configuration: Dual
• Rohs Compliant: No

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
800
600
400
200
0
COLLECTOR-EMITTER VOLTAGE V
8
6
4
2
0
8
6
4
2
0
0
0
0
COLLECTOR-EMITTER SATURATION
V
T
FORWARD CHARACTERISTICS
GE
j
VOLTAGE CHARACTERISTICS
V
=25 C
OUTPUT CHARACTERISTICS
COLLECTOR CURRENT I
V
V
GE
=15V
GE
EMITTER CURRENT I
GE
V
2
=20V
200
200
GE
=15V
FREE-WHEEL DIODE
=14V
=13V
( TYPICAL )
( TYPICAL )
( TYPICAL )
4
400
400
6
T
T
600
600
T
T
V
E
j
j
V
V
V
j
j
V
V
= 25 C
= 125 C
GE
= 25 C
= 125 C
( A )
C
GE
GE
GE
8
GE
GE
( A )
=12V
=9V
=8V
=7V
=11V
=10V
CE
800
800
10
( V )
10
800
600
400
200
10
10
10
10
–1
0
8
6
4
2
0
10
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
–1
CAPACITANCE CHARACTERISTICS
V
C
C
V
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
T
TRANSFER CHARACTERISTICS
GE
CE
ies,
res
VOLTAGE CHARACTERISTICS
j
2 3
= 25 C
=10V
= 0V, T
C
4
4
oes
5 7 10
: f = 100kHz
: f = 1MHz
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
j
= 25 C
( TYPICAL )
( TYPICAL )
( TYPICAL )
0
8
8
2 3 5 7 10
12
12
CM400DY-66H
1
T
T
j
j
I
I
I
C
C
2 3 5 7 10
= 25 C
= 125 C
C
INSULATED TYPE
16
16
= 800A
= 400A
GE
= 160A
GE
C
C
C
( V )
( V )
ies
oes
res
CE
20
20
( V )
2
Mar. 2003