CM1000HC-66R Powerex Inc, CM1000HC-66R Datasheet - Page 8

• Manufacturer Part Number: CM1000HC-66R
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM1000HC-66R

• Prx Availability: RequestQuote
• Voltage: 3300V
• Current: 1000A
• Circuit Configuration: Single
• Rohs Compliant: No

4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
100
0.1
1.2
0.8
0.6
0.4
0.2
10
TRANSIENT THERMAL IMPEDANCE
1
1
0
0.001
100
CHARACTERISTICS (TYPICAL)
V
R
Tj = 125°C, Inductive load
Rth(j-c)Q = 12.0K/kW
Rth(j-c)R = 22.5K/kW
CC
G(on)
= 1800V, V
= 2.4Ω, L
CHARACTERISTICS
0.01
Emitter Current [A]
GE
S
= 150nH
= ±15V
Time [s]
1000
0.1
1
Irr
trr
10000
10
10000
1000
100
10
Z
R
τ
i
i
[sec] :
FREE-WHEEL DIODE REVERSE RECOVERY
[K/kW] :
th
j (
100
0.1
−
10
) c
1
100
(
) t
CHARACTERISTICS (TYPICAL)
V
R
Tj = 150°C, Inductive load
=
CC
G(on)
∑
i
= 1800V, V
=
n
= 2.4Ω, L
1
0.0096
0.0001
1
R
i
CM1000HC-66R
Emitter Current [A]
⎧
⎪
⎨
⎪ ⎩
GE
S
1
= 150nH
= ±15V
−
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
exp
1000
0.1893
0.0058
2
⎛
⎜
⎜
⎝
−
τ
t
HVM-1061
i
⎞
⎟
⎟
⎠
⎫
⎪
⎬
⎪ ⎭
0.4044
0.0602
3
INSULATED TYPE
Irr
trr
10000
8 of 9
4
0.3967
0.3512
10000
1000
100
10