CM1200HC-66H Powerex Inc, CM1200HC-66H Datasheet

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CM1200HC-66H

Manufacturer Part Number
CM1200HC-66H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1200HC-66H

Prx Availability
RequestQuote
Voltage
3300V
Current
1200A
Circuit Configuration
Single
Rohs Compliant
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM1200HC-66H
Manufacturer:
ST
Quantity:
430
Part Number:
CM1200HC-66H
Manufacturer:
MIT
Quantity:
20 000
Part Number:
CM1200HC-66H
Quantity:
55
Part Number:
CM1200HC-66H/E064AD6N-015
Manufacturer:
MIT
Quantity:
20 000
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTLINE DRAWING & CIRCUIT DIAGRAM
CM1200HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
screwing depth
min. 7.7
3 - M4 NUTS
CM
79.4
57
C
0.1
0.3
E
C
E
61.5
G
190
171
57
0.3
20.25
41.25
0.1
0.5
0.1
13
0.2
0.3
C
E
0.2
61.5
57
0.3
0.1
C
E
8 - 7
screwing depth
min. 16.5
6 - M8 NUTS
0.1
I
V
Insulated Type
1-element in a Pack
AISiC Baseplate
C ................................................................
MOUNTING HOLES
CES .......................................................
CM1200HC-66H
5.2
MITSUBISHI HVIGBT MODULES
0.2
HIGH POWER SWITCHING USE
C
G
E
40
0.3
LABEL
CIRCUIT DIAGRAM
C
E
15
INSULATED TYPE
0.2
C
E
Dimensions in mm
1200A
3300V
C
E
Jul. 2005

Related parts for CM1200HC-66H

CM1200HC-66H Summary of contents

Page 1

... 20.25 41. NUTS 79.4 0.3 61.5 0.3 screwing depth min. 7.7 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM1200HC-66H I C ................................................................ V CES ....................................................... Insulated Type 1-element in a Pack AISiC Baseplate 0.5 0 NUTS MOUNTING HOLES 0.1 0.3 screwing depth 61 ...

Page 2

... 1 125 100nH G(on Inductive load ) does not exceed T j rating (150 C). jmax MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 1200 (Note 1) 2400 1200 (Note 1) 2400 14700 –40 ~ +150 –40 ~ +125 –40 ~ +125 ...

Page 3

... Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, = 1W/m·K grease Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 8.5 K/kW — — ...

Page 4

... 125 2000 2400 0 MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) = 20V 125 GATE-EMITTER VOLTAGE ( V ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS ( TYPICAL ) T ...

Page 5

... 125 C, Inductive load off rec 1 0 2000 2400 0 MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS ( TYPICAL ) = 1650V 1200A GATE CHARGE ( C ) HALF-BRIDGE ( TYPICAL ) = 1650V 1200A C = 15V off ...

Page 6

... MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE ( TYPICAL ) = 1650V 15V 1.6 G(off) = 125 C, Inductive load ...

Page 7

... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules RECOVERY SAFE OPERATING AREA 3000 125 C j 2500 2000 1500 1000 500 0 3000 4000 0 EMITTER-COLLECTOR VOLTAGE ( V ) MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE REVERSE ( RRSOA ) 2200V, di/dt 5400A/ s 1000 2000 3000 4000 Jul. 2005 ...

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