CM900HB-90H Powerex Inc, CM900HB-90H Datasheet - Page 4

• Manufacturer Part Number: CM900HB-90H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM900HB-90H

• Prx Availability: RequestQuote
• Voltage: 4500V
• Current: 900A
• Circuit Configuration: Single
• Rohs Compliant: No

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
10
7.0
6.0
5.0
4.0
3.0
2.0
1.0
20
16
12
–1
SWITCHING ENERGY CHARACTERISTICS
5
3
2
7
5
3
2
7
5
3
2
7
5
0
8
4
0
1
0
SWITCHING TIME CHARACTERISTICS
0
0
5
GATE CHARGE CHARACTERISTICS
V
R
Inductive load
V
R
Inductive load
V
I
7 10
CC
G
C
CC
G
CC
COLLECTOR CURRENT I
2000 4000 6000 8000 10000 12000
= 900A
= 10 , Tj = 125 C,
300
= 10 , T
= 2250V, V
= 2250V, V
2
= 2250V
GATE CHARGE Q
2 3
600
HALF-BRIDGE
HALF-BRIDGE
CURRENT ( A )
( TYPICAL )
j
( TYPICAL )
( TYPICAL )
= 125 C
GE
GE
900 1200 1500 1800
5 7 10
= 15V,
= 15V
G
3
( nC )
t
t
C
t
t
d(off)
d(on)
2 3
r
f
( A )
E
E
E
on
off
rec
5
10
10
10
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
REVERSE RECOVERY CHARACTERISTICS
–1
–2
SWITCHING ENERGY CHARACTERISTICS
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
0
7
5
3
2
7
5
3
2
7
5
3
2
1
0
1
0
10
5
0
–3
Single Pulse
T
R
R
V
Inductive load
IGBT drive conditions
V
7 10
C
IMPEDANCE CHARACTERISTICS
CC
GE
th(j – c)Q
th(j – c)R
2 3 5 7
= 25 C
= 2250V, T
= 15V, R
5
EMITTER CURRENT I
OF FREE-WHEEL DIODE
2
GATE RESISTANCE ( )
TRANSIENT THERMAL
= 0.009K/ W
= 0.018K/ W
2 3
10
10
HALF-BRIDGE
MITSUBISHI HVIGBT MODULES
–2
HIGH POWER SWITCHING USE
( TYPICAL )
( TYPICAL )
TIME ( s )
G
2 3 5 7
j
= 125 C
= 10
15
5 7 10
20
10
CM900HB-90H
3
–1
E
2 3 5 7
t
I
( A )
rr
rr
2 3
25
INSULATED TYPE
30
10
5
10
7
5
3
2
10
7
5
3
2
10
7
5
3
2
10
0
5
4
3
2
Mar. 2003