RM1200DG-66S Powerex Inc, RM1200DG-66S Datasheet

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... HIGH VOLTAGE DIODE MODULE MITSUBISHI ELECTRIC CORPORATION K.Kurachi I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE RM1200DG-66S Flat base type (Insulated package, AlSiC base plate) High power converters & Inverters for traction application See Fig. 1 Fig Outline drawing HVM-2010-A PAGE (HV-SETSU ...

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Maximum Ratings Item 6.1 Repetitive peak reverse voltage V 6.2 Non-repetitive peak reverse voltage 6.3 Reverse DC voltage 6.4 DC forward current 6.5 Surge forward current 6.6 Surge current load integral 6.7 Isolation voltage 6.8 Junction temperature 6.9 Storage ...

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Thermal Characteristics Item 8.1 Thermal resistance 8.2 Contact thermal resistance Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm. 9. Mechanical Characteristics Item 9.1 Mounting torque 9.2 Mounting torque 9.3 Mass 9.4 Comparative tracking index 9.5 Clearance ...

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Test Circuit & Definition of Switching Characteristics Rg DUT: diode Diode part: reverse recovery I F di/dt trr di 0 Irr Fig. 2 – Definitions of reverse recovery charge & energy HIGH VOLTAGE ...

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Performance curves 12-1 Forward characteristics................................................................................................... 6 12-2 Reverse recovery energy characteristics ...................................................................... 7 12-3 Reverse recovery current characteristics...................................................................... 8 12-4 Transient thermal impedance characteristics ............................................................... 9 12-5 Reverse recovery safe operating area ......................................................................... 10 HIGH VOLTAGE DIODE MODULE MITSUBISHI ...

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Forward characteristics 2400 2200 2000 1800 1600 1400 1200 1000 800 Tj=125°C 600 400 200 HIGH VOLTAGE DIODE MODULE MITSUBISHI ELECTRIC CORPORATION Tj=25° Forward voltage V FM Forward voltage characteristics (typical) HVM-2010 ...

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Reverse recovery energy characteristics 1 125° 100nH, Inductive load Integration range: 10%V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Reverse recovery energy characteristics (typical) HIGH VOLTAGE DIODE MODULE MITSUBISHI ELECTRIC CORPORATION = ...

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Reverse recovery current characteristics 3000 Tj = 125° 100nH, Inductive load 2500 2000 1500 1000 500 0 0 Reverse recovery current characteristics (typical) HIGH VOLTAGE DIODE MODULE MITSUBISHI ELECTRIC CORPORATION = 1650V R 500 1000 Forward ...

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Transient thermal impedance characteristics 1.2 Rth(j- K/kW 1.0 0.8 0.6 0.4 0.2 0.0 0.001 HIGH VOLTAGE DIODE MODULE MITSUBISHI ELECTRIC CORPORATION 0.01 0.1 Time [sec.] Transient thermal impedance characteristics HVM-2010 PAGE (HV-SETSU ...

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Reverse recovery safe operating area 3000 2500 2000 1500 1000 500 0 0 Reverse recovery safe operating area (RRSOA) HIGH VOLTAGE DIODE MODULE MITSUBISHI ELECTRIC CORPORATION 1000 2000 Reverse voltage V R HVM-2010 125°C, V ≤ 2200 ...

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Rev. No. − Original A － HIGH VOLTAGE DIODE MODULE MITSUBISHI ELECTRIC CORPORATION Summary of changes HVM-2010-A Signature & date S.Iura 27-Sep.-2006 K.Kurachi 31-Jan.-2008 PAGE (HV-SETSU ...