BTS 7930B Infineon Technologies, BTS 7930B Datasheet - Page 9

• Manufacturer Part Number: BTS 7930B
• Manufacturer: Infineon Technologies

Specifications of BTS 7930B

• Packages: P-TO263-7
• Operating Range: 5.5 - 28.0 V
• Rds (on) (typ): 28.0 mOhm
• Id(lim): 31.0 A
• Iq (typ): 7.0 µA
• Diagnosis: OV, OT, OC-failure flag, current sense

4.2
The power stages of the BTS 7930B consist of a p-channel vertical DMOS transistor for
the high side switch and a n-channel vertical DMOS transistor for the low side switch. All
protection and diagnostic functions are located in a separate top chip. Both switches can
be operated up to 25 kHz, allowing active freewheeling and thus minimizing power
dissipation in the forward operation of the integrated diodes.
The on state resistance
junction temperature
Figure 4.
Figure 4
Data Sheet
R
High Side Switch
ON(HS)
mΩ
40
35
30
25
20
15
10
5
4
Power Stages
8
Typical On State Resistance vs. Supply Voltage
12
T
16
j
. The typical on state resistance characteristics are shown in
R
V
ON
S
20
T
is dependent on the supply voltage
T
T
j
j
= 150°C
j
= -40°C
= 25°C
24
V
28
8
Low Side Switch
R
ON(LS)
Block Description and Characteristics
mΩ
70
60
50
40
30
20
10
4
High Current PN Half Bridge
8
12
V
16
S
Rev. 2.0, 2006-06-01
as well as on the
V
20
T
S
T
j
T
= 150°C
j
j
BTS 7930B
= -40°C
= 25°C
24
V
28