BTS 7970B Infineon Technologies, BTS 7970B Datasheet - Page 10

• Manufacturer Part Number: BTS 7970B
• Manufacturer: Infineon Technologies

Specifications of BTS 7970B

• Packages: P-TO263-7
• Operating Range: 5.5 - 28.0 V
• Rds (on) (typ): 16.0 mOhm
• Id(lim): 68.0 A
• Iq (typ): 7.0 µA
• Diagnosis: OV, OT, OC-failure flag, current sense

4.2
The power stages of the BTS 7970B consist of a p-channel vertical DMOS transistor for
the high side switch and a n-channel vertical DMOS transistor for the low side switch. All
protection and diagnostic functions are located in a separate top chip. Both switches can
be operated up to 25 kHz, allowing active freewheeling and thus minimizing power
dissipation in the forward operation of the integrated diodes.
The on state resistance
junction temperature
Figure 6.
Figure 6
Data Sheet
High Side Switch
R
ON(HS)
mΩ
20
25
10
15
5
4
Power Stages
8
Typical On State Resistance vs. Supply Voltage
12
T
16
j
. The typical on state resistance characteristics are shown in
R
ON
20
T
T
is dependent on the supply voltage
j
T
j
= 150°C
j
= -40°C
= 25°C
V
24
S
V
28
9
Low Side Switch
R
ON(LS)
Block Description and Characteristics
mΩ
20
25
10
15
5
4
High Current PN Half Bridge
8
12
V
16
S
Rev. 2.0, 2006-05-09
as well as on the
20
T
T
j
T
= 150°C
j
j
BTS 7970B
= -40°C
= 25°C
V
S
24
V
28